c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . w w w w f f f f p3205 p3205 p3205 p3205 rev.a jun .201 1 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features 110a,50v, r ds(on) (max 8m ? )@v gs =10v ultra-low gate charge(typical133nc) fast switching capability 100%avalanche tested maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi s advanced planar stripe,dmos technology. this latest technology has beenespecially designed to minimize on-state resistance ,have a lowgate charge with superior switching performance ,and ruggedavalanche characteristics.this power mosfet is well suited for synchronous dc-dc converters and power management inportable and battery operated products. absolute maximum ratings symbol parameter value units v dss drain source voltage 50 v i d continuous drain current(@tc=25 ) 110 a continuous drain current(@tc=100 ) 80 a i dm drain current pulsed (note1) 390 a v gs gate to source voltage 20 v e ar repetitive avalanche energy (note1) 20 mj dv/dt peak diode recovery dv /dt (note3) 5.0 v/ ns p d total power dissipation(@tc=25 ) 200 w derating factor above 25 1.3 w/ t j ,t stg junction and storage temperature -55~ 150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 0.75 /w r qcs thermal resistance , c ase-to-sink - 0.5 - /w r qja thermal resistance , junction-to -ambient - - 62 /w
w w w w f f f f p3205 p3205 p3205 p3205 2 / 7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v, v ds = 0 v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 50 v,v gs =0v - - 10 a drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 50 - - v breakdown voltage temperature coefficient bv dss / t j i d =1ma, referenced to 25 - 0.057 - v/ gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2 - 4 v drain -source on resistance r ds(on) v gs =10v,i d = 60 a - - 8.0 m ? forward transconductance gfs v ds = 25 v,i d = 60 a 44 - - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 3247 - pf reverse transfer capacitance c rss - 211 - output capacitance c oss - 781 - switching time rise time tr v dd = 28 v, i d = 60 a r g = 4.5 ? v gs = 1 0v (note4,5) - 101 - ns turn-on time ton - 14 - fall time tf - 65 - turn-off time toff - 50 - total gate charge(gate-source plus gate-drain) qg v d s = 44 v, v gs =10v, i d = 60 a (note 4 ,5) - 133 146 nc gate-source charge qgs - - 35 gate-drain("miller") charge qgd - - 54 source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 110 a pulse drain reverse current i drp - - - 390 a forward voltage(diode) v dsf i dr = 60 a,v gs =0v - - 1.4 v reverse recovery time trr i dr = 60 a,v gs =0v, di dr / dt =100 a / s - 69 104 ns reverse recovery charge qrr - 143 215 c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 138u h i as = 60 a,,r g = 25 ? ,starting t j =25 3.i sd 60 a,di/dt 207 a/us,v dd < bv dss , t j 150 4.pulse test:pulse width 40 0us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
w w w w f f f f p3205 p3205 p3205 p3205 3 / 7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.1 on state characteristics fig.2 on state characteristics fig.3 transfer characteristics fig.5 capacitance variation vs drain voltage fig.6 gate charge characteristics fig.5 on-resistance variation vs junction temperature 60
w w w w f f f f p3205 p3205 p3205 p3205 4 / 7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.7 maximum safe operation area fig.8 maximum drain current vs case temperature fig.9 transient thermal response curve
w w w w f f f f p3205 p3205 p3205 p3205 5 / 7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.10 gate test circuit & waveform fig.11 resistive switching test circuit & waveform fig.12 unclamped inductive switching test circuit & waveform
w w w w f f f f p3205 p3205 p3205 p3205 6 / 7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.13 peak diode recovery dv/dt test circuit & waveform
w w w w f f f f p3205 p3205 p3205 p3205 7 / 7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance to-220 to-220 to-220 to-220 package package package package dimension dimension dimension dimension unit:mm
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